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PUBLICATIONS

High Speed Endurance and Switching Measurements for Memristive Switches

Published

Author(s)

Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris

Abstract

Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient current during the Set/Reset operation with a rise time of 4 ns and simultaneously measure the OFF state resistance (Roff) to 1.6 GΩ and the ON state resistance (Ron) to less than 10 . It can also rapidly cycle through the sense states to study endurance. Solid electrolyte Pt/Ta2O5/Cu memristive switches (Ron/Roff ratio of >104) are used to highlight this new measurement capability.
Citation
Electrochemical and Solid State Letters
Volume
15
Issue
5
Pub Type
Journals

Download Paper

DOI Link
Semiconductors and Polymers

Citation

Shrestha, P. , Ochia, A. , Cheung, K. , Campbell, J. , Baumgart, H. and Harris, G. (2012), High Speed Endurance and Switching Measurements for Memristive Switches, Electrochemical and Solid State Letters, [online], https://doi.org/10.1149/2.002206esl (Accessed October 11, 2025)

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Created March 6, 2012, Updated November 10, 2018
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