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High Speed Endurance and Switching Measurements for Memristive Switches
Published
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Abstract
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient current during the Set/Reset operation with a rise time of 4 ns and simultaneously measure the OFF state resistance (Roff) to 1.6 GΩ and the ON state resistance (Ron) to less than 10 . It can also rapidly cycle through the sense states to study endurance. Solid electrolyte Pt/Ta2O5/Cu memristive switches (Ron/Roff ratio of >104) are used to highlight this new measurement capability.
Shrestha, P.
, Ochia, A.
, Cheung, K.
, Campbell, J.
, Baumgart, H.
and Harris, G.
(2012),
High Speed Endurance and Switching Measurements for Memristive Switches, Electrochemical and Solid State Letters, [online], https://doi.org/10.1149/2.002206esl
(Accessed October 3, 2025)