Hacker, C.
and Diebold, A.
(2013),
2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter, Future Fab International
(Accessed July 16, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
2012 Updates to the International Technology Roadmap for Semiconductors (ITRS) Metrology Chapter
Published
Author(s)
, Alain C. Diebold
Abstract
During 2012, the main emphasis of the Metrology Technical Working Group was to revise the Metrology Technology Requirements Tables and initiate the new text for the 2013 revision of the International Technology Roadmap for Semiconductors (ITRS). The key areas of interest from the ITRS were in the 3-Dimensional nature of measurement needs and in revising the Lithography Metrology Technology requirements tables to clarify critical dimension (CD) measurement requirements. The need to measure 3D features as well as the films and structures fabricated on these features illustrates the links between Lithography metrology and measurements done for Front end Processing (FEP) or Interconnects. These 2012 Metrology Roadmap updates are discussed below.Citation
Future Fab International
Issue
44
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created January 1, 2013, Updated February 19, 2017