Geiser, B.
, Steel, E.
, Henry, K.
, Olson, D.
and Prosa, T.
(2013),
Analysis of Implanted Silicon Dopant Profiles, Ultramicroscopy (Accessed August 22, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Analysis of Implanted Silicon Dopant Profiles
Published
Author(s)
B. P. Geiser, , , D. Olson, T.J. Prosa
Abstract
Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize variation in physical reconstruction parameters. A tip-profile reconstruction was utilized where measurements of tip-profile, post-analysis specimen radius and sphere-to-cone radius ratio were required as inputs into the reconstruction process. A variation of 4% is observed in the dose measurement under these conditions. Various considerations necessary to narrow the observed variation in measured dose, toward the limit imposed by counting statistics, are discussed.Citation
Ultramicroscopy
Volume
132
Issue
0
Pub Type
Journals
Keywords
atom probe tomography, dopant profile, semiconductor
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created August 31, 2013, Updated October 12, 2021