Chbili, Z.
, Cheung, K.
, Campbell, J.
, Suehle, J.
, Ioannou, D.
, Lelis, A.
and Ryu, S.
(2014),
Unusual Bias Temperature Instability in SiC DMOSFET, International Integrated Reliability Workshop Final Report, Stanford Sierra Camp, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=914921
(Accessed November 3, 2025)
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Unusual Bias Temperature Instability in SiC DMOSFET
Published
Author(s)
, , , , D. E. Ioannou, Aivars Lelis, Sei-Hyung Ryu
Abstract
We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.Proceedings Title
International Integrated Reliability Workshop Final Report
Conference Dates
October 14-17, 2013
Conference Location
Stanford Sierra Camp, CA
Conference Title
2013 IEEE International Integrated Reliability Workshop
Pub Type
Conferences
Download Paper
Keywords
SiC, DMOSFET, BTI
Citation
Issues
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Created March 3, 2014, Updated February 19, 2017