The Material Measurement Laboratory of the National Institute of Standards and Technology (NIST) is seeking qualified persons (U.S. citizens preferred) to develop a multi-scale modeling infrastructure for predicting the properties and performance of advanced semiconductor materials and devices. This position will focus on developing high throughput density functional theory (DFT) workflows to accelerate material property prediction of semiconductor of materials. Some of the key properties to be predicted include the electronic structure, bandgaps, band alignments and transport properties, and defects.
This opportunity is to be an associate researcher in the NIST Materials Science and Engineering Division for a term of 1 year, with options to renew. Associate researchers are NOT Federal Employees, but they work along with NIST researchers and with NIST’s world-class instrumentation. Relocation expenses will not be provided. U.S. citizens hired into associate positions may have the opportunity to seek longer term Federal Employment.
Interested persons (U.S. citizens preferred) who meet all of the required qualifications are invited to express their interest by sending an email that briefly describes their qualifications along with a CV to 642assoc [at] nist.gov (642assoc[at]nist[dot]gov). U.S. citizens should note “U.S. citizen” and the opportunity title in the email subject line. All others should note “Non-U.S. citizen” and the opportunity title in the email subject line.