Duong, T.
, Kumar, A.
, Ortiz, J.
, Bhattacharya, S.
, Veliadi, V.
and Waltrip, B.
(2020),
Physics-based Electro-thermal Saber Model Validation for 3.3 kV, 45 A 4H-SiC MOSFET in Medium Voltage Power Converters, 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, US
(Accessed February 15, 2026)
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Physics-based Electro-thermal Saber Model Validation for 3.3 kV, 45 A 4H-SiC MOSFET in Medium Voltage Power Converters
Published
Author(s)
, Ashish Kumar, , Subhashish Bhattacharya, Victor Veliadi,
Proceedings Title
2019 IEEE International Electron Devices Meeting (IEDM)
Conference Dates
December 7-11, 2019
Conference Location
San Francisco, CA, US
Pub Type
Conferences
Citation
Issues
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Created April 1, 2020, Updated February 13, 2026