Cheung, K.
, Wen, Y.
and Tsui, B.
(2025),
On the response time constant of interface defects, Applied Physics Letters
(Accessed July 26, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
On the response time constant of interface defects
Published
Author(s)
, , Bing-Yue Tsui
Abstract
Interface defect response time is a key parameter in some common electrical measurements of MOS devices, most notably the hi-lo CV measurement as well as the conductance measurement. A long established believe is that interface defects at energies close to the band edge have too short a response time to be measured properly by these techniques. This believe is preventing near band edge interface defects to be measured with confidence. Here we show that this believe is valid only in depletion. Since to measure defect level near the band edge, the capacitor is biased to accumulation, a different equation should be used and that the response time of interface defects near the band edge is constant and not too fast to be measured.Citation
Applied Physics Letters
Pub Type
Journals
Keywords
MOS, CV, band edge defects, interface defects, response time
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created January 21, 2025, Updated February 26, 2025