Model Validation for Scanning Electron Microscopy

Published

April 27, 2023

Author(s)

Olga Ridzel, Wataru Yamane, Ishiaka Mansaray, John S. Villarrubia

Abstract

We are beginning projects to validate the physics models used for interpretation of electron microscopy images. In one, we will measure electron yields and energy spectra from cleaned well-characterized samples subjected to electron bombardment inside of a spherical retarding field analyzer in ultra-high vacuum. In another, we will measure the same features, lithographically patterned on free-standing Si membranes, with measurement techniques that differ in their interaction physics. A modeling project will compare measurement results with simulations using existing and new models. Good models should predict the observed yields and produce agreement among measurement techniques.

Proceedings Title

Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII

Conference Dates

February 26-March 2, 2023

Conference Location

San Jose, CA, US

Conference Title

SPIE Advanced Lithography + Patterning

Pub Type

Conferences

Download Paper

https://doi.org/10.1117/12.2661103

Local Download

Keywords

critical dimension, electron microscopy, electron transport modeling, nanometer-scale dimensional metrology, secondary electron yield measurement, SEM, STEM

Citation

Ridzel, O. , Yamane, W. , Mansaray, I. and Villarrubia, J. (2023), Model Validation for Scanning Electron Microscopy, Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, San Jose, CA, US, [online], https://doi.org/10.1117/12.2661103, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936398 (Accessed October 8, 2025)