Black phosphorus tunneling field-effect transistors

Published

December 21, 2018

Author(s)

Albert Davydov, Huairuo Zhang, Leonid A. Bendersky

Abstract

Band-to-band tunneling field-effect transistors (TFETs)1-7 have emerged as promising candidates to replace conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-power integration circuits and have been demonstrated to overcome the thermionic limit, that results intrinsically in subthreshold swings of at least 60 mV/dec at room temperature1, 5, 6. Here we demonstrate TFETs based on few-layer black phosphorus, in which multiple top gates create electrostatic doping in the source and drain regions. By electrically tuning the doping types and levels in the source and drain regions, the device can be reconfigured to allow for TFET or MOSFET operation and can be tuned to be n-type or p-type. After a careful quantitative comparison of the experimental data with self-consistent atomistic simulations, we also project the performance of black phosphorus TFETs for scaled channel and oxide thicknesses.

Citation

ACS Nano

Pub Type

Journals

Keywords

2D materials, phosphorene, FET, atomistic simulation, beyond CMOS

Citation

Davydov, A. , Zhang, H. and Bendersky, L. (2018), Black phosphorus tunneling field-effect transistors, ACS Nano (Accessed April 29, 2024)