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The Role of Measurement Uncertainty in Achieving First-Pass Design Success
Published
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
Abstract
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement uncertainties through the modelextraction and verification process. We then investigate the accuracy of the extracted model parameters and the role of measurement uncertainty in gauging the ability of the model to predict the behavior of the transistor in large-signal operating states.
Williams, D.
, Chamberlin, R.
, Zhao, W.
, Cheron, J.
and Miguel, U.
(2016),
The Role of Measurement Uncertainty in Achieving First-Pass Design Success, IEEE Compound Semiconductor IC Symposium Digest, Austin, TX, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921396
(Accessed October 28, 2025)