Self-aligned multi-channel silicon nanowire field-effect transistors

Published

December 12, 2012

Author(s)

Hao Zhu, Qiliang Li, Hui Yuan, Helmut Baumgart, D. E. Ioannou, Curt A. Richter

Abstract

Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with standard photolithographic process. The electrical characteristics of SiNW FETs containing different numbers of nanowire channels were measured and compared. The multi-channel SiNW FETs show excellent performance: small subthreshold slope ( 75 mV/dec), large ON/OFF ratio ( 108), high break-down voltage (> 30 V) and good carrier mobility (µp 100 cm2V-1s-1). These excellent device properties were achieved by using a clean, self-alignment process and an improved device structure with Schottky barriers at the source and drain contacts. Such high-performance multi-nanowire FETs are attractive for logic, memory and sensor applications.

Citation

Solid State Electronics

Volume

78

Pub Type

Journals

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DOI Link

Keywords

Nanoelectronics, beyond-CMOS, Self-alignment, Nanowire field-effect transistor, Multi-channel nanowire FET, Schottky barrier

Citation

Zhu, H. , Li, Q. , Yuan, H. , Baumgart, H. , Ioannou, D. and Richter, C. (2012), Self-aligned multi-channel silicon nanowire field-effect transistors, Solid State Electronics, [online], https://doi.org/10.1016/j.sse.2012.05.058 (Accessed October 12, 2025)