Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films

Published

August 15, 2011

Author(s)

Ryan P. Birringer, Roey Shaviv, Roy H. Geiss, David T. Read, Reinhold Dauskardt

Abstract

The effects of electroplating chemistry and dielectric diffusion barrier composition on Cu voiding and barrier adhesion are reported. Adhesion was quantified using the four-point bend thin film adhesion technique, and voiding in the Cu films was quantified using scanning electron microscopy. A total of 12 different film stacks were investigated, including three different Cu electroplating chemistries and four different barrier materials (SiN, N doped SiC, O doped SiC, and dual layer SiC). Both plating chemistry and barrier composition have a large effect on interface adhesion and voiding in the Cu film. X-ray photoelectron spectroscopy was used to investigate the segregation of Cu electroplating impurities, such as S and Cl, to the Cu / barrier interface. Additionally, secondary ion mass spectrometry was used to quantify oxygen content at the Cu / barrier interface in a subset of samples. This interface oxygen content is correlated with measured adhesion values.

Citation

Microelectronic Engineering

Volume

110

Issue

4

Pub Type

Journals

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DOI Link

Keywords

Adhesion, barrier, copper, damascene, interface, voiding

Citation

Birringer, R. , Shaviv, R. , Geiss, R. , Read, D. and Dauskardt, R. (2011), Effects of barrier composition and electroplating chemistry on adhesion and voiding in copper/dielectric diffusion barrier films, Microelectronic Engineering, [online], https://doi.org/10.1063/1.3624659 (Accessed October 9, 2025)