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NanoFab Tool: Sandvik LPCVD TEOS-LTO

Sandvik Anneal Furnaces
Credit: NIST

Photo of the Sandvik anneal furnaces

The Sandvik low pressure chemical vapor deposition (LPCVD) of silicon oxide furnace supports low temperature oxide (LTO) and TEOS deposition on substrates ranging from small chips to wafer diameters up to 200 mm. All samples require SC1 and SC2 cleans prior to processing.

Specifications/Capabilities

  • Automatic recipe controller using Variable Parameter Table (VPT)
  • Maximum Temperature: 700 °C.  
  • Maximum Deposition Thickness: 5 µm.
  • Standard processes:
    • TEOS based silicon oxide deposition
    • Low temperature oxide deposition
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in), 150 mm (6 in), and 200 mm (8 in)
  • Small pieces supported: Yes

Typical Applications

  • Inter-level metal isolation
  • Insulating layer
  • Sidewall coating and trench refill
  • Diffusion or implantation mask
Created April 10, 2019