The Sandvik low pressure chemical vapor deposition (LPCVD) of silicon oxide furnace supports low temperature oxide (LTO) and TEOS deposition on substrates ranging from small chips to wafer diameters up to 200 mm. All samples require SC1 and SC2 cleans prior to processing.
Automatic recipe controller using Variable Parameter Table (VPT)
Maximum Temperature: 700 °C.
Maximum Deposition Thickness: 5 µm.
TEOS based silicon oxide deposition
Low temperature oxide deposition
Wafer diameters: 75 mm (3 in), 100 mm (4 in), 150 mm (6 in), and 200 mm (8 in)