The two Sandvik low pressure chemical vapor deposition (LPCVD) silicon nitride furnaces support stoichiometric and low stress silicon nitride deposition on substrates ranging from small chips to wafer diameters up to 200 mm. All samples require SC1 and SC2 cleans prior to processing.
Automatic recipe controller using Variable Parameter Table (VPT)
Maximum Temperature: 825 °C
Maximum Deposition Thickness: 2 µm
Process Gases: Dichlorosilane (DCS) and ammonia (NH3)
Stoichiometric nitride deposition
Low stress silicon nitride deposition
Wafer diameters: 75 mm (3 in), 100 mm (4 in), 150 mm (6 in), and 200 mm (8 in)