The Sandvik low pressure chemical vapor deposition (LPCVD) of silicon oxide furnace supports low temperature oxide (LTO) on substrates ranging from small chips to wafer diameters up to 150 mm. All samples require SC1 and SC2 cleans prior to processing.
Automatic recipe controller using Variable Parameter Table (VPT)
Maximum Temperature: 700 °C.
Maximum Deposition Thickness: 5 µm.
Low temperature oxide deposition
Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in)