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NanoFab Tool: Plasma-Therm Versaline High Density Plasma Chemical Vapor Deposition (HDPCVD)

pecvd

The Plasma-Therm Versaline high density plasma chemical vapor deposition (HDPCVD) system uses an inductively coupled plasma to remotely ionize deposition molecules at high power away from the substrate. It then draws the ionized molecules to the substrate surface at low energy which reduces surface temperature while producing a high density film. This technology provides a low temperature alternative to furnace driven processes and conventional plasma enhanced chemical vapor deposition methods for the deposition of silicon dioxide, silicon nitride, and amorphous silicon. The HDPCVD system produces high quality, pinhole-free films that are comparable to high temperature furnace deposited films. The system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.

Specifications/Capabilities

  • Maximum radio frequency (RF) bias power: 600 W.
  • Maximum inductively coupled plasma power (ICP): 2000 W.
  • Maximum substrate temperature: 180 °C.
  • Film thicknesses ranging from a few nanometers to several micrometers.
  • Processes supported:
    • Silicon dioxide.
    • Silicon nitride.
    • Silicon Oxynitride.

Usage Information

Supported Sample Sizes

  • Maximum wafer diameter: 200 mm (8 in).
  • Wafer diameters: 75 mm (3 in), 100 mm (4 in), 150 mm (6 in), and 200 mm (8 in).
  • Small pieces supported: Yes.
  • Maximum thickness: 1 mm.

Typical Applications

  • Optical waveguides.
  • Silicon gate devices.
  • Solar cell fabrication.
Created June 4, 2014, Updated January 15, 2020