The Plasma-Therm Versaline high density plasma chemical vapor deposition (HDPCVD) system uses an inductively coupled plasma to remotely ionize deposition molecules at high power away from the substrate. It then draws the ionized molecules to the substrate surface at low energy which reduces surface temperature while producing a high density film. This technology provides a low temperature alternative to furnace driven processes and conventional plasma enhanced chemical vapor deposition methods for the deposition of silicon dioxide, silicon nitride, and amorphous silicon. The HDPCVD system produces high quality, pinhole-free films that are comparable to high temperature furnace deposited films. The system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.