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NanoFab Tool: Inductively Coupled Plasma (ICP) Silicon Etcher: Oxford PlasmaPro 100 Cobra
Photograph of the Oxford Silicon PlasmaPro 100 Cobra etcher.
The Oxford Silicon PlasmaPro 100 Cobra etcher is a fluorocarbon based plasma etch system that provides users anisotropic etching of silicon at room and low temperatures. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The manual load system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.
Specifications/Capabilities
- Inductively coupled plasma (ICP) power source: up to 3000 W
- Radio frequency (RF) power source: up to 600 W
- Electrode temperature range: -150 °C to 400 °C.
- Process Gases: Ar, He, N2, O2, H2, CF4, C2F6, C4F8, CHF3, CH4 and SF6
- Anisotropic etching of silicon only.
- Low temperature silicon etching.
Usage Information
Supported Sample Sizes
- Maximum wafer diameter: 200 mm.
- Small pieces supported: Yes.
Typical Applications
- Optical device fabrication.
- General device patterning.