The Material Measurement Laboratory of the National Institute of Standards and Technology (NIST) is seeking qualified persons (U.S. citizens preferred) to develop a multi-scale modeling infrastructure for the predicting the properties and performance of advanced semiconductor materials and devices. This position will focus on integrating first principles methods with device level models, such as Technology Computer Aided Design (TCAD) simulations. Of particular interest is developing models to better predict the interface properties for semiconductor heterostructures. Some of the materials of interest for interface design include Si, GaN, AlN, Al2O3, HfO2, Al, and Cu.
This opportunity is to be an associate researcher in the NIST Materials Science and Engineering Division for a term of 1 year, with options to renew. Associate researchers are NOT Federal Employees, but they work along with NIST researchers and with NIST’s often world class instrumentation. Relocation expenses will not be provided. U.S. citizens hired into associate positions may have the opportunity to seek longer term Federal Employment.
Interested persons (U.S. citizens preferred) who meet all of the required qualifications are invited to express their interest by sending an email that briefly describes their qualifications along with a CV to 642assoc [at] nist.gov (642assoc[at]nist[dot]gov). U.S. citizens should note “U.S. Citizen” and the opportunity title in the email subject line. All others should note “Non-U.S. Citizen” and the opportunity title in the email subject line.