The Material Measurement Laboratory of the National Institute of Standards and Technology (NIST) is seeking qualified persons (U.S. citizens preferred) to develop a multi-scale modeling infrastructure for the predicting the properties and performance of advanced semiconductor materials and devices via atomistic simulations to obtain transport properties via non-equilibrium Green’s function (NEGF) techniques. Some of the key properties include conductance, I-V characteristics and transmission spectra. A key aspect of this work will be exploring how defects impact the transport properties of industrially relevant semiconductor interfaces. The systems of interest include gate-all-around transistors (Si/SiO2), high power devices (SiC/SiO2) and high electron mobility transistors (GaN/AlGaN).
This opportunity is to be an associate researcher in the NIST Material Data Division for a term of 1 year, with options to renew. Associate researchers are NOT Federal Employees, but they work along with NIST researchers and with NIST’s world-class instrumentation. Relocation expenses will not be provided. U.S. citizens hired into associate positions may have the opportunity to seek longer term Federal Employment.
Interested persons (U.S. citizens preferred) who meet all of the required qualifications are invited to express their interest by sending an email that briefly describes their qualifications along with a CV to 641assoc [at] nist.gov (641assoc[at]nist[dot]gov). U.S. citizens should note “US.. Citizen” and the opportunity title in the email subject line. All others should note “Non-U.S. Citizen” and the opportunity title in the email subject line.