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Wideband Frequency-Domain Characterization of High-Impedance Probes

Published

Author(s)

Uwe Arz, Howard C. Reader, Pavel Kabos, Dylan F. Williams

Abstract

In this paper we investigate the broadband microwave properties of high-impedance probes designed for on-wafer waveform measurements. We show that the standard two-tier characterization method fails. We introduce two new methods of characterization, both of which yield equivalent results.
Volume
40
Conference Dates
November 29-30, 2001
Conference Location
San Diego, CA
Conference Title
58th Auto. RF Tech. Group Conference

Keywords

frequency-domain characterization, high-impedance probes, on-wafer measurement

Citation

Arz, U. , Reader, H. , Kabos, P. and Williams, D. (2001), Wideband Frequency-Domain Characterization of High-Impedance Probes, 58th Auto. RF Tech. Group Conference, San Diego, CA, [online], https://doi.org/10.1109/ARFTG.2001.327491 (Accessed June 20, 2024)

Issues

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Created November 30, 2001, Updated November 10, 2018