This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electric field present at a suitably biased tip-sample junction is an accepted method for nanoelectric device fabrication. The inherent simplicity and generality of this approach has allowed many research groups to contribute to the exploration of novel prototyping strategies and towards a more complete understanding of the control factors needed to reliably fabricate functional devices.
Proceedings Title: Microprocesses and Nanotechnology Conference
Conference Dates: July 13-16, 1998
Conference Location: Kyoungju, KO
Conference Title: Microprocesses and Nanotechnology
Pub Type: Conferences
anodic oxidation, nanofabrication, scanned probe microscopy, silicon