Dagata, J.
, Inoue, T.
, Itoh, J.
, Matsumoto, K.
and Yokoyama, H.
(1998),
Voltage Modulation Scanned Probe Oxidation (Abstract), Microprocesses and Nanotechnology Conference, Kyoungju, KO (Accessed April 23, 2026)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Voltage Modulation Scanned Probe Oxidation (Abstract)
Published
Author(s)
, T Inoue, J Itoh, K Matsumoto, H Yokoyama
Abstract
This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electric field present at a suitably biased tip-sample junction is an accepted method for nanoelectric device fabrication. The inherent simplicity and generality of this approach has allowed many research groups to contribute to the exploration of novel prototyping strategies and towards a more complete understanding of the control factors needed to reliably fabricate functional devices.Proceedings Title
Microprocesses and Nanotechnology Conference
Conference Dates
July 13-16, 1998
Conference Location
Kyoungju, KO
Conference Title
Microprocesses and Nanotechnology
Pub Type
Conferences
Keywords
anodic oxidation, nanofabrication, scanned probe microscopy, silicon
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created January 1, 1998, Updated February 19, 2017