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Void formation in nanowire contacts revealed

Published

Author(s)

Kristine A. Bertness

Abstract

Popular contact scheme to p-type GaN fails when applied to nanowires.
Citation
Nanotechweb.org

Keywords

electrical contacts, GaN nanowires

Citation

Bertness, K. (2012), Void formation in nanowire contacts revealed, Nanotechweb.org, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=912070 (Accessed December 5, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 23, 2012, Updated February 19, 2017