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VARIABILITY OF CHARGE NOISE IN Al-BASED SET TRANSISTORS

Published

Author(s)

Mark W. Keller, Blaise Jeanneret, Joe Aumentado

Abstract

We measured the charge noise of four Al-based SET transistors on multiple cooldowns. We found a consistent 1/f component independent of thermal cycling and other treatments, but large variations in the total noise spectrum due to two-level fluctuators.
Proceedings Title
Conference on Precision Electromagnetic Measurements Digest
Conference Dates
July 10-14, 2006
Conference Location
Turin, 1, IT

Keywords

1/f noise, charge noise, single-electron tunneling

Citation

Keller, M. , Jeanneret, B. and Aumentado, J. (2006), VARIABILITY OF CHARGE NOISE IN Al-BASED SET TRANSISTORS, Conference on Precision Electromagnetic Measurements Digest, Turin, 1, IT, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32202 (Accessed February 28, 2024)
Created July 13, 2006, Updated October 12, 2021