Russell, C.
, Owens, S.
, Diebold, A.
and Deslattes, R.
(2008),
Using Graying Incidence X-Ray Reflectivity to Characterize Thin Films for Semiconductor Applications, Thin Solid Films
(Accessed April 26, 2024)
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Using Graying Incidence X-Ray Reflectivity to Characterize Thin Films for Semiconductor Applications
Published
Author(s)
, , A C. Diebold,
Abstract
The application of grazing incidence x-ray reflectivity to the measurement of thin film thickness, interface width, and film density is described. Measurements are done using conventional x-ray instrumentation with input and output optics specifically adapted to this application. The data are analyzed with one or more software modeling packages specifically designed for x-ray reflectivity profile molding. The oscillatory components of these profiles arise from interference of x-rays reflected at the various layer boundaries. Film thickness is easily calculated from the angular difference between oscillatory peaks and the x-ray wavelength. Combining well-known x-ray wavelengths with accurate angle measurements leads to robust estimation of layer thicknesses. Capabilities of this method are illustrated by applications to silicon oxynitride and tantalum pentoxide gate dielectric films and tantalum/copper film stacks.Citation
Thin Solid Films
Pub Type
Journals
Keywords
thin film metrology, x-ray reflectivity
Citation
Created October 16, 2008