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Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis

Published

Author(s)

Chukwudi A. Okoro, Yaw S. Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler

Abstract

In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in TSV daisy chains degraded with thermal cycling. Similar trend was also observed when the traditional DC resistance (RDC) measurement technique was used. Focused ion beam (FIB) based failure analysis, showed that the root cause for this trend was due to the formation and propagation of voids with thermal cycling. Many different failure modes were also identified.
Proceedings Title
Proceeding of IEEE Electronic Components and Technology Conference (ECTC)
Conference Dates
May 28-31, 2013
Conference Location
Las Vegas, NV

Citation

Okoro, C. , Obeng, Y. , Obrzut, J. , Kabos, P. and Hummler, K. (2013), Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis, Proceeding of IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV (Accessed May 18, 2024)

Issues

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Created May 28, 2013, Updated February 19, 2017