Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Ultra-Thin Aluminum Oxide as a Thermal Oxidation Barrier on Metal Films

Published

Author(s)

L Gan, Romel Gomez, Audie M. Castillo, P J. Chen, Cedric J. Powell, William F. Egelhoff Jr.

Abstract

We have investigated the role of aluminum oxide films as barriers to thermal oxidation of Co, Ni, Fe, NiFe, Mn, Ta, Cu Al and Cr in air. The oxidation of the film is monitored by measuring the electrical resistance following a brief anneal in air. We find that 0.3nm and 1nm Al protect the underlying metal film against thermal oxidation in air at temperatures a few hundred degrees above the temperature at which the unprotected metal oxides. These results suggested that in the production of magnetic tunnel junction samples could be annealed in air after the oxidation of the oxidation of Al. The expected benefits of the annealing in air would include the oxidation of any remaining of metallic Al, a more uniform Al2Od3 thickness, and a sharper metal/Al2Od3 interface.
Citation
Thin Solid Films
Volume
415
Issue
No. 1-2

Keywords

aluminum oxide, magnetic tunnel junction, thermal oxidation, thin film resistance, X-ray photoelectron spectroscopes

Citation

Gan, L. , Gomez, R. , Castillo, A. , Chen, P. , Powell, C. and Egelhoff, W. (2002), Ultra-Thin Aluminum Oxide as a Thermal Oxidation Barrier on Metal Films, Thin Solid Films (Accessed September 23, 2021)
Created August 1, 2002, Updated February 17, 2017