Thin Film Growth of Titanium and Titanium Nitride Via Gas-Phase Reaction of Sodium Vapor With Titanium Tetrachloride

Published

November 1, 1998

Author(s)

Jay H. Hendricks, M I. Aquino-Class, Michael R. Zachariah

Abstract

In this paper, we present a process which has the benefits of operating at lower temperatures than conventional CVD, that uses low cost precursors, and produces only environmentally benign byproducts. This new method for depositing Ti and TiN thin films has been demonstrated using a coflow diffusion reactor to react Na metal vapor with TiCl4 as described by the following equation: 4Na(g) +TiCl4(g) ---^Ar--->Ti(s) +4NaCl(g). In this reaction, sodium strips chlorine from titanium tetrachloride freeing titanium metal to grow into a thin film on a substrate placed in the reaction zone. TiN films were produced by the introduction of nitrogen gas into the reactor. Using this reaction chemistry, we have produced Ti and TiN thin films on Cu substrates at 610 C (considerably lower than the 900 C to 1200 C required for conventional thermal CVD of titanium). Thermodynamics calculations indicated that this class of chemistry is generic and that a wide range of metals and ceramics could be grown using this process. The thin films were primarily analyzed by scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS) and Raman Spectroscopy.

Proceedings Title

The 19th Proceedings of the Electrochemical Society

Volume

MA 98-2

Conference Dates

November 2-6, 1998

Conference Title

Electrochemical Society

Pub Type

Conferences

Keywords

Chemical Vapor Deposition, Na, Thin Films, Ti, Ti02, TiCl4, TiN

Citation

Hendricks, J. , Aquino-Class, M. and Zachariah, M. (1998), Thin Film Growth of Titanium and Titanium Nitride Via Gas-Phase Reaction of Sodium Vapor With Titanium Tetrachloride, The 19th Proceedings of the Electrochemical Society (Accessed May 4, 2024)