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PUBLICATIONS

Theory of Photo-induced Resonant Tunneling in Heterojunctions

Published

Author(s)

S Apell, David R. Penn, Mark D. Stiles

Abstract

The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiples of the photon energy. An alternative mechanism in which bulk photoabsorption is the photoexcitation mechanism is discussed. The two theories take the same form in the weak- field limit, and an expression is given for the relative size of tunneling currents
Citation
Journal of Applied Physics
Volume
72
Issue
3
Pub Type
Journals
Nanoelectronics

Citation

Apell, S. , Penn, D. and Stiles, M. (1992), Theory of Photo-induced Resonant Tunneling in Heterojunctions, Journal of Applied Physics (Accessed October 13, 2025)

Issues

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Created December 31, 1991, Updated October 12, 2021
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