Li, S.
(1979),
The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-47
(Accessed May 8, 2024)
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The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon:
Published
Author(s)
Citation
- NBS SP 400-47
Report Number
NBS SP 400-47
Pub Type
NIST Pubs
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Created January 1, 1979, Updated May 19, 2023