TY  - GEN
AU  - Sheng S Li
C2  - , National Institute of Standards and Technology, Gaithersburg, MD
DA  - 1979-01-01 05:01:00
DO  - https://doi.org/10.6028/NBS.SP.400-47
LA  - en
PB  - , National Institute of Standards and Technology, Gaithersburg, MD
PY  - 1979
TI  - The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon:
ER  -