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Technology and Metrology of New Electronic Materials and Devices

Published

Author(s)

Eric M. Vogel

Abstract

Scaling of the complementary metal oxide semiconductor (CMOS) field effect transistor (FET) and its traditional materials has been the basis of the semiconductor industry for nearly 30 years. Traditional materials such as SiO2 gate dielectrics and polysilicon electrodes have been pushed to their limits. Therefore, entirely new materials such as high-k gate dielectrics and metal gate electrodes, and structures such as finFETs are required. These materials and structures will likely extend CMOS for at least 10 years. Beyond this timeframe, entirely new device structures (such as nanowire or molecular devices) and computational paradigms will likely be required to improve performance. The electronic properties of all of these nanodevices, from planar MOSFETs to beyond CMOS, are extremely susceptible to small perturbations in properties such as dimension, structure, roughness, and defects. The extreme sensitivity of the electronic properties of these devices to their nanoscale physical properties defines a significant need for advancements in metrology.
Citation
Nature Nanotechnology
Volume
2

Keywords

beyond CMOS, complementary metal oxide semiconductor (CMOS), field effect transistor (FET), metrology, nanoelectronics, silicon

Citation

Vogel, E. (2007), Technology and Metrology of New Electronic Materials and Devices, Nature Nanotechnology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32358 (Accessed April 17, 2024)
Created January 1, 2007, Updated January 27, 2020