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A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Mobilities and Effective Intrinic Carrier Concentrations in p-type Ga1-xAlxAs

Published

Author(s)

Herbert S. Bennett

Abstract

The changes in carrier densities of states, band structures, mobilities, and effective intrinsic carrier concentrations nie due to high concentration effects of dopants and carriers have been calculated for acceptor densities that span the Mott transition between 1016cm-3 and 1020cm-3 in p-type Ga1-xAlxAs.
Citation
Solid-State Electronics
Volume
46

Citation

Bennett, H. (2002), A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Mobilities and Effective Intrinic Carrier Concentrations in p-type Ga<sub>1-x</sub>Al<sub>x</sub>As, Solid-State Electronics (Accessed June 5, 2023)
Created October 1, 2002, Updated January 27, 2020