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A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Effective Intrinic Carrier Concentrations in Ga1-xAlxAs Heterostructures

Published

Author(s)

Herbert S. Bennett, James J. Filliben

Abstract

A critical issue identified in both the technology roadmap from the Optoelectronics Industry Development Association and the roadmaps from the National Electronics Manufacturing Initiative, Inc. is the need for predictive computer simulations of processes, devices, and circuits. The goal of this paper is to respond to this need by representing the vast amounts of theoretical data for transport properties in the multi-dimensional space of mole fractions of AlAs, dopant densities, and carrier densities in terms of closed form analytical expressions.
Citation
Journal of Research of the National Institute of Standards and Technology
Volume
107
Issue
1

Citation

Bennett, H. and Filliben, J. (2002), A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Effective Intrinic Carrier Concentrations in Ga<sub>1-x</sub>Al<sub>x</sub>As Heterostructures, Journal of Research of the National Institute of Standards and Technology (Accessed May 30, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 29, 2002, Updated October 12, 2021