NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Study of Low-Frequency Charge Pumping on Thin Stacked Dielectrics
Published
Author(s)
C E. Weintraub, Eric M. Vogel, John R. Hauser, Nian Yang, Veena Misra, J. J. Wortman, J J. Ganem, Pascal Masson
Citation
IEEE Transactions on Electron Devices
Volume
48
Issue
12
Pub Type
Journals
Keywords
Charge Pumping, Dielectric, Interface State Nitrogen, MOS, Tunneling
Citation
Weintraub, C.
, Vogel, E.
, Hauser, J.
, Yang, N.
, Misra, V.
, Wortman, J.
, Ganem, J.
and Masson, P.
(2001),
Study of Low-Frequency Charge Pumping on Thin Stacked Dielectrics, IEEE Transactions on Electron Devices
(Accessed October 28, 2025)