Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

The Structural Evolution of Pore Formation in Low-K Dielectric Thin Films

Published

Author(s)

M S. Silverstein, Barry J. Bauer, V. J. Lee, R C. Hedden, B G. Landes, J L. Lyons, B Kern, J Niu, T Kalantar

Abstract

Specular x-ray reflectivity and small angle neutron scattering were used to characterize changes in the porosity, pore size and pore size distribution on processing a SiLK oligomer filled with 21.6 %v/v of a deuterated porogen with an average radius of 56 . Processing yielded a decrease in porosity to about 11%, an increase in average pore radius to 83 , and a narrower pore size distribution. A sample with an unusual pore structure could be easily identified
Volume
25(1)
Conference Dates
March 24-28, 2003
Conference Title
ULSI Technology

Keywords

electronic materials, Low-k dielectrics, nanostructured materials, pore size neutron scattering, porosity, thin films, x-ray reflectivity

Citation

Silverstein, M. , Bauer, B. , Lee, V. , Hedden, R. , Landes, B. , Lyons, J. , Kern, B. , Niu, J. and Kalantar, T. (2003), The Structural Evolution of Pore Formation in Low-K Dielectric Thin Films, ULSI Technology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852139 (Accessed April 14, 2024)
Created January 1, 2003, Updated February 17, 2017