The Structural Evolution of Pore Formation in Low-K Dielectric Thin Films

Published

January 1, 2003

Author(s)

M S. Silverstein, Barry J. Bauer, V. J. Lee, R C. Hedden, B G. Landes, J L. Lyons, B Kern, J Niu, T Kalantar

Abstract

Specular x-ray reflectivity and small angle neutron scattering were used to characterize changes in the porosity, pore size and pore size distribution on processing a SiLK oligomer filled with 21.6 %v/v of a deuterated porogen with an average radius of 56 . Processing yielded a decrease in porosity to about 11%, an increase in average pore radius to 83 , and a narrower pore size distribution. A sample with an unusual pore structure could be easily identified

Volume

25(1)

Conference Dates

March 24-28, 2003

Conference Title

ULSI Technology

Pub Type

Conferences

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Keywords

electronic materials, Low-k dielectrics, nanostructured materials, pore size neutron scattering, porosity, thin films, x-ray reflectivity

Citation

Silverstein, M. , Bauer, B. , Lee, V. , Hedden, R. , Landes, B. , Lyons, J. , Kern, B. , Niu, J. and Kalantar, T. (2003), The Structural Evolution of Pore Formation in Low-K Dielectric Thin Films, ULSI Technology, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852139 (Accessed October 11, 2025)