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Structural Characterization of Deep Sub-Micron Lithographic Structures Using Angle Neutron Scattering



Eric K. Lin, Ronald L. Jones, Wen-Li Wu, John Barker, P J. Bolton, Z Barclay


As critical dimensions continue to decrease with each technology node, the precise characterization of line width and profile becomes an increasingly challenging task. Small angle neutron scattering (SANS) offers several advantages for the characterization of sub-100 nm structures, particularly as a calibrating measurement method. SANS is used to characterize three samples prepared with the same mask and focus conditions, but different photoresist formulations. The mask pattern consists of parallel lines with a nominal line width of 180 nm and a 1:2 line to space ratio. Scattering data are taken using both a focused neutron beam instrument (two-dimensional data) and a perfect crystal diffraction ultra-high resolution small angle neutron scattering (USANS) instrument. From the location and intensity of observed diffraction peaks, both the periodicity of each grating pattern and the average line widths are determined from simple analytic expressions with nanometer resolution.
SPIE Meeting


critical dimension, lithography, nanoscale metrology, small angle neutron scattering


Lin, E. , Jones, R. , Wu, W. , Barker, J. , Bolton, P. and Barclay, Z. (2008), Structural Characterization of Deep Sub-Micron Lithographic Structures Using Angle Neutron Scattering, SPIE Meeting (Accessed July 13, 2024)


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Created October 16, 2008