Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Published

June 24, 2008

Author(s)

John B. Schlager, Kristine A. Bertness, Paul T. Blanchard, Lawrence H. Robins, Alexana Roshko, Norman A. Sanford

Abstract

We report steady-state and time-resolved photoluminescence (TRPL) measurements on individual GaN nanowires (6-20 micrometers in length, 30-940 nm in diameter) grown by nitrogen-plasma-assisted, catalyst-free MBE on Si(111) and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9X10³ cm/s for our silicon-doped GaN nanowires.

Citation

Journal of Applied Physics

Volume

103

Issue

124309

Pub Type

Journals

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Keywords

gallium nitride, molecular beam epitaxy, nanowire, photoluminescence, strain, time-resolved photoluminescence

Citation

Schlager, J. , Bertness, K. , Blanchard, P. , Robins, L. , Roshko, A. and Sanford, N. (2008), Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32785 (Accessed October 9, 2025)