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In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films
Published
Author(s)
Yvonne B. Gerbig, Chris A. Michaels, Robert F. Cook
Abstract
Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique. This is, to our knowledge, the first sequence of Raman images documenting the evolution of the strain fields and changes in the phase distributions of a material while conducting an indentation experiment.
Gerbig, Y.
, Michaels, C.
and Cook, R.
(2015),
In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films, Journal of Materials Research, [online], https://doi.org/10.1557/jmr.2014.316
(Accessed October 9, 2025)