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In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films

Published

Author(s)

Yvonne B. Gerbig, Chris A. Michaels, Robert F. Cook

Abstract

Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique. This is, to our knowledge, the first sequence of Raman images documenting the evolution of the strain fields and changes in the phase distributions of a material while conducting an indentation experiment.
Citation
Journal of Materials Research
Volume
30
Issue
03

Keywords

Raman spectroscopy, nano-indentation, phase transformation

Citation

Gerbig, Y. , Michaels, C. and Cook, R. (2015), In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films, Journal of Materials Research, [online], https://doi.org/10.1557/jmr.2014.316 (Accessed May 24, 2024)

Issues

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Created February 14, 2015, Updated November 10, 2018