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Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Published

Author(s)

Ted C. Thorbeck, Akira Fujiwara, Neil M. Zimmerman

Abstract

The ability to design gate capacitances to quantum dots is critical for many applications of quantum dots from quantum information and single electron logic to standards. We have studied and simulated many multi-gate silicon quantum dot devices fabricated with different dimensions and can draw three conclusions. (1) The gate capacitances to the quantum dots are reproducible to within 10% for nominally identical devices. (2) Gate capacitances scale with device dimensions. (3) A capacitance simulator can predict gate capacitances to within 20% without using any fitting parameters.
Citation
Applied Physics Letters

Keywords

gate capacitance, quantum dots, silicon, coulomb blockade

Citation

Thorbeck, T. , Fujiwara, A. and Zimmerman, N. (2012), Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910154 (Accessed June 25, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created September 5, 2012, Updated August 27, 2018