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Silicon-Based Tunable-Barrier Single Charge Sources

Published

Author(s)

Neil M. Zimmerman

Abstract

We have demonstrated the operation of, and are assessing theoretically and experimentally the error rates of, silicon-based single-electron turnstiles, pumps, and CCDs. These devices are conceptually very similar to the metal-based single-electron pumps which have already proven to have a very low error rate; potentially, they have several substantial advantages, including higher current value, higher temperature of operation, and simpler operation
Proceedings Title
CPEM 2004 Digest
Conference Dates
June 22-July 2, 2004
Conference Location
London, UK
Conference Title
Conference on Precision Electromagnetic Measurements

Citation

Zimmerman, N. (2004), Silicon-Based Tunable-Barrier Single Charge Sources, CPEM 2004 Digest, London, UK, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31590 (Accessed April 13, 2024)
Created June 27, 2004, Updated January 27, 2020