Zimmerman, N.
(2004),
Silicon-Based Tunable-Barrier Single Charge Sources, CPEM 2004 Digest, London, UK, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31590
(Accessed April 28, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Silicon-Based Tunable-Barrier Single Charge Sources
Published
Author(s)
Abstract
We have demonstrated the operation of, and are assessing theoretically and experimentally the error rates of, silicon-based single-electron turnstiles, pumps, and CCDs. These devices are conceptually very similar to the metal-based single-electron pumps which have already proven to have a very low error rate; potentially, they have several substantial advantages, including higher current value, higher temperature of operation, and simpler operationProceedings Title
CPEM 2004 Digest
Conference Dates
June 22-July 2, 2004
Conference Location
London, UK
Conference Title
Conference on Precision Electromagnetic Measurements
Pub Type
Conferences
Download Paper
Citation
Created June 27, 2004, Updated January 27, 2020