Dagata, J.
, Tseng, W.
, Bennett, J.
, Evans, C.
, Schneir, J.
and Harary, H.
(1990),
Selective-Area Epitaxial Growth of Gallium Arsenide on Silicon Substrates Patterned Using a Scanning Tunneling Microscope Operating in Air, Applied Physics Letters
(Accessed October 7, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Selective-Area Epitaxial Growth of Gallium Arsenide on Silicon Substrates Patterned Using a Scanning Tunneling Microscope Operating in Air
Published
Author(s)
, W. F. Tseng, J. Bennett, C J. Evans, J. Schneir,
Citation
Applied Physics Letters
Volume
57
Issue
23
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 2, 1990, Updated October 12, 2021