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Selective-Area Epitaxial Growth of Gallium Arsenide on Silicon Substrates Patterned Using a Scanning Tunneling Microscope Operating in Air

Published

Author(s)

John A. Dagata, W. F. Tseng, J. Bennett, C J. Evans, J. Schneir, Howard H. Harary
Citation
Applied Physics Letters
Volume
57
Issue
23

Citation

Dagata, J. , Tseng, W. , Bennett, J. , Evans, C. , Schneir, J. and Harary, H. (1990), Selective-Area Epitaxial Growth of Gallium Arsenide on Silicon Substrates Patterned Using a Scanning Tunneling Microscope Operating in Air, Applied Physics Letters (Accessed June 16, 2024)

Issues

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Created December 2, 1990, Updated October 12, 2021