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Displaying 1 - 15 of 15

Mechanism of Bismuth Stimulated Bottom-up Gold Feature Filling

December 30, 2022
Author(s)
Daniel Josell, Trevor Braun, Thomas P. Moffat
The mechanism that underlies 〖Bi〗^(3+)-stimulated extreme bottom-up Au filling of trenches and vias in slightly alkaline 〖Na〗_3 Au(〖SO〗_3 )_2+〖Na〗_2 〖SO〗_3 electrolytes is explored. The remarkable void-free feature filling and self-passivation behavior

Development of an automated millifluidic platform and data-analysis pipeline for rapid electrochemical corrosion measurements: a pH study on Zn-Ni

July 25, 2022
Author(s)
Howie Joress, Brian DeCost, Najlaa Hassan, Trevor Braun, Justin Gorham, Jason Hattrick-Simpers
We describe the development of a millifluidic based scanning droplet cell platform for rapid and automated corrosion. This system allows for measurement of corrosion properties (e.g., open circuit potential, corrosion current through Tafel and linear

Effect of Chloride on Microstructure in Cu Filled Microscale Through Silicon Vias

November 2, 2021
Author(s)
Daniel Josell, Thomas P. Moffat, Trevor Braun
The microstructure of copper filled through silicon vias deposited in a CuSO4 + H2SO4 electrolyte containing micromolar concentrations of deposition rate suppressing poloxamine and chloride additives is explored using electron backscatter diffraction

High Aspect Ratio Ag Nanowire Mat Electrodes for Electrochemical CO production from CO2

September 13, 2021
Author(s)
David Raciti, Trevor Braun, Brian M. Tackett, Heng Xu, Mutya Cruz, Benjamin Wiley, Thomas P. Moffat
An interconnected network of high-aspect ratio Ag nanowires was pressed against porous gas diffusion layers (both conductive or non-conductive) to use as a gas diffusion electrode (GDE) for the electrochemical reduction of CO2 to CO. Varying the amount of

Simulation of Copper Electrodeposition in Millimeter Size Through-Silicon Vias

December 16, 2020
Author(s)
Trevor Braun, Daniel Josell, Thomas P. Moffat
Computational predictions of copper deposition in millimeter size through-silicon vias (mm-TSV) are presented based on localized breakdown of a co-adsorbed polyether-chloride suppressor layer. The model builds upon previous work on localized Cu deposition

{A high-throughput structural and electrochemical study of metallic glass formation in Ni-Ti-Al

June 4, 2020
Author(s)
Howard L. Joress, Brian L. DeCost, Suchismita Sarker, Trevor M. Braun, Logan T. Ward, Kevin Laws, Apurva Mehta, Jason R. Hattrick-Simpers
Based on a set of machine learning predictions of glass formation in the Ni-Ti-Al system, we have undertaken a high-throughput experimental study of that system. We utilized rapid synthesis followed by high- throughput structural and electrochemical

Simulation of Copper Electrodeposition in Through-Hole Vias

October 1, 2019
Author(s)
Trevor M. Braun, Daniel Josell, Thomas P. Moffat, Jimmy John
Copper electrodeposition processes for filling metallized through-hole (TH) and through-silicon vias (TSV) depend on selective breakdown of a co-adsorbed polyether-chloride adlayer within the recessed surface features. In this work, a co-adsorption

Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias

January 18, 2019
Author(s)
Trevor Braun, Daniel Josell, Manoj R. Silva, Thomas P. Moffat
This work examines Cu deposition in low chloride, suppressor containing electrolytes that exhibit a transition from passive to active deposition partway down filling features based on the coupling of suppression breakdown and surface topography. The

Superconformal Nickel Deposition in Through Silicon Vias: Experiment and Prediction

May 16, 2018
Author(s)
Trevor Braun, Daniel Josell, Thomas P. Moffat, Hyo Jong Lee, SH Kim
This work examines the filling of Through Silicon Vias (TSV) by Ni deposition from a NiSO4 + NiCl2 + H3BO3 electrolyte containing a branched polyethyleneimine suppressor previously. Feature filling occurs through the coupling of transport limited