March 26, 2018
Author(s)
Jeffrey T. Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Briles, David R. Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott A. Diddams, Scott B. Papp, Sae Woo Nam, Richard P. Mirin
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300°C, it is back-end compatible with complementary metal-oxide semiconductor