Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Travis Briles (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 28 of 28

An Integrated-Photonics Optical-Frequency Synthesizer

May 3, 2018
Author(s)
Daryl T. Spencer, Tara E. Drake, Travis Briles, Jordan R. Stone, Laura C. Sinclair, Connor D. Fredrick, Qing Li, Daron A. Westly, Bojan R. Ilic, Aaron Bluestone, Nicolas Volet, Tin Komljenovic, Seung Hoon Lee, Dong Yoon Oh, Myoung-Gyun Suh, Ki Youl Yang, Martin H. Pfeiffer, Tobias J. Kippenberg, Erik Norberg, Kerry Vahala, Kartik A. Srinivasan, Nathan R. Newbury, Luke Theogarajan, John E. Bowers, Scott A. Diddams, Scott B. Papp
Integrated-photonics microchips now enable a range of advanced functionalities for high- coherence applications like data transmission, for highly optimized physical sensors, and for harnessing quantum states, but with size, extensibility, and portability

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

March 26, 2018
Author(s)
Jeffrey T. Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Briles, David R. Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott A. Diddams, Scott B. Papp, Sae Woo Nam, Richard P. Mirin
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride films for nonlinear integrated photonics. With a peak processing temperature less than 300°C, it is back-end compatible with complementary metal-oxide semiconductor
Was this page helpful?