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Search Publications by

Daniel Sunday (Fed)

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Displaying 1 - 25 of 34

Buried Structure in Block Copolymer Films Revealed by Soft X-ray Reflectivity

May 20, 2021
Daniel Sunday, Jacob L. Thelen, R Joseph Kline, Chun Zhou, Jiaxing Ren, Paul Nealey
Interactions between polymers and surfaces can be used to influence properties including mechanical performance in nanocomposites, the glass transition temperature, and the orientation of thin film block copolymers (BCPs). In this work we investigate how

Confinement and Processing Can Alter the Morphology and Periodicity of Bottlebrush Block Copolymers in Thin Films

December 22, 2020
Daniel Sunday, Moshe Dolejsi, Alice B. Chang, Lee J. Richter, Ruipeng Li, Paul Nealey, Robert H. Grubbs
Bottlebrush block copolymers (BBCPs) are intriguing architectural variations on linear BCPs with highly tunable structure. Confinement can have a significant impact on polymer assembly, giving rise to changes in morphology, assembly kinetics, and properties

The Concentration Dependence of the Size and Symmetry of a Bottlebrush Polymer in a Good Solvent

August 7, 2020
Daniel F. Sunday, Alexandros Chremos, Tyler B. Martin, Alice B. Chang, Adam B. Burns, Robert H. Grubbs
Bottlebrush polymers consist of a linear backbone with densely grafted sidechains which impact the rigidity of the molecule. The persistence length of the bottlebrush backbone in solution is influenced by both the intrinsic structure of the polymer and by

X-Ray Metrology of Nanowire/ Nanosheet FETs for Advanced Technology Nodes

March 30, 2020
Madhulika S. Korde, Regis J. Kline, Daniel Sunday, Nick Keller, Subhadeep Kal, Cheryl Alix, Aelen Mosden, Alain C. Diebold
The three-dimensional architectures for field effect transistors (FETs) with vertical stacking of Gate-all-Around Nanowires provide a pathway to increased device density and superior electrical performance. However, the transition from research into

X-ray Metrology for the Semiconductor Industry Tutorial

February 1, 2019
Daniel F. Sunday, Wen-Li Wu, Scott Barton, Regis J. Kline
The semiconductor industry is in need of new, in-line dimensional metrology methods with higher spatial resolution for characterizing their next generation nanodevices. The purpose of this short course is to train the semiconductor industry on the NIST

Xi-cam: A versatile interface for data visualization and analysis

April 13, 2018
Ronald Pandolfi, Dinesh Kumar, Guillaume Freychet, Holden Parks, Singanallur venkatakrishnan, Austin Blair, shreya Sahoo, Stefano marchesini, Christopher D. Liman, Daniel Sunday, Lenson Pellouchoud, Christopher Tassone, dilworth parkinson, Sean Fackler, Zhang Jiang, Apurva Mehta, Masafumi Fukuto, Kevin G. Yager, Regis J. Kline, Joseph Strzalka, Thomas Caswell, daniel Allan, Stuart Campbell, James Sethian, Harinarayan Krishnan, Alexander Hexemer

Optimizing Self-Consistent Field Theory Block Copolymer Models with X-Ray Metrology

February 12, 2018
Adam F. Hannon, Daniel Sunday, Alec Bowen, Gurdaman Khaira, Jiaxing Ren, Paul Nealey, Juan de Pablo, Regis J. Kline
A block copolymer self-consistent field theory (SCFT) model is used for direct analysis of experimental X-ray scattering data obtained from thin films of polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) made from directed self-assembly. In a departure

Modeling the polarized X-ray scattering from periodic nanostructures with molecular anisotropy

December 1, 2017
Christopher D. Liman, Thomas A. Germer, Daniel F. Sunday, Dean M. DeLongchamp, Regis J. Kline
We discuss a new technique to measure molecular orientation in nanostructures using resonant soft X-rays. This technique is based on a variable angle transmission measurement called critical dimension X-ray scattering that enables the characterization of

Advancing X-Ray Scattering Metrology Using Inverse Genetic Algorithms

July 7, 2016
Adam F. Hannon, Daniel F. Sunday, Donald A. Windover, Regis J. Kline
We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov Chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings

Scanning electron microscope measurement of width and shape of 10 nm patterned lines using a JMONSEL-modeled library

July 1, 2015
John S. Villarrubia, Andras Vladar, Bin Ming, Regis J. Kline, Daniel F. Sunday, Jasmeet Chawla, Scott List
The width and shape of 10 nm to 12 nm wide lithographically patterned SiO2 lines were measured in the scanning electron microscope by fitting the measured intensity vs. position to a physics-based model in which the lines’ widths and shapes are parameters