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Search Publications by: Ari Feldman (Fed)

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Displaying 26 - 35 of 35

Monolithic device for modelocking and stabilization of a frequency comb

December 15, 2015
Author(s)
Kevin L. Silverman, Richard P. Mirin, Ari D. Feldman, Todd E. Harvey, Thomas Schibli, Chien-Chung Lee, Yosuke Hayashi
We demonstrate a device that integrates a III-V semiconductor saturable absorber mirror with a graphene electro-optic modulator, which provides a monolithic solution to modelocking and noise suppression in a frequency comb. The device offers a pure loss

Electronic Enhancement of the Exciton Coherence Time in Charged Quantum Dots

October 19, 2015
Author(s)
Galan A. Moody, Corey A. McDonald, Ari D. Feldman, Todd E. Harvey, Richard P. Mirin, Kevin L. Silverman
Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information and photonics research. Nature sets the ultimate limit, however, given by the strength of the system’s coupling to the

Atomic Clock with 1x10 -18 Room-Temperature Blackbody Stark Uncertainty

December 31, 2014
Author(s)
Kyle P. Beloy, Nathan M. Hinkley, Nate B. Phillips, Jeffrey A. Sherman, Marco Schioppo, John H. Lehman, Ari D. Feldman, Leonard M. Hanssen, Christopher W. Oates, Andrew D. Ludlow
The Stark shift due to blackbody radiation (BBR) is a key factor limiting the performance of many atomic frequency standards, with the BBR environment inside the clock apparatus being difficult to characterize at a high level of precision. Here we

Diode-array UV solar spectroradiometer implementing a digital micromirror device

November 20, 2014
Author(s)
Ari D. Feldman, Tim Burnitt, Geiland Porrovecchio, Marek Smid, Luca Egli, Julian Gr?bner, Katherine M. Nield
The solar ultraviolet spectrum captured by commercially available diode-array spectroradiometers is dominated by stray light from longer wavelengths with higher intensity. The implementation of a digital micromirror device in an array spectroradiometer has

Space charge limited current effects in silicon at high injection levels

June 20, 2010
Author(s)
Ari D. Feldman, Richard K. Ahrenkiel
The space charge limited current (SCLC) effect will be analyzed in undoped crystalline silicon wafers at high injection levels. Space charge limited currents develop when the electric field from the injected carriers exceeds that of the background doping