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Search Publications by: Jason Campbell (Fed)

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Displaying 176 - 200 of 230

A New Interface Defect Spectroscopy Method

April 11, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing

Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

January 3, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates
Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon in most

The Role of High-Field Stress in the Negative Bias Temperature Instability

December 1, 2010
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodology

Gate Dielectrics Year-In-Review

May 3, 2010
Author(s)
Jason P. Campbell
The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The

NBTI: Confusion, Frustration, and Promise?

May 2, 2010
Author(s)
Jason P. Campbell
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been

Frequency-Dependent Charge-Pumping: The Depth Question Revisited

May 1, 2010
Author(s)
Fan Zhang, Kin P. Cheung, Jason Campbell, John S. Suehle
A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between

A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

October 21, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required

An Improved Fast I d -V ^d g Measurement Technology With Expanded Application Range

October 19, 2009
Author(s)
Chen Wang, Liangchun (. Yu, Jason P. Campbell, Kin P. Cheung, Yi Xuan, Peide Ye, John S. Suehle, David Zhang
Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper

NBTI: Why Won't This Thing Go Away?

October 19, 2009
Author(s)
Jason P. Campbell
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been
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