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Publications

Search Publications by

Steven R. Blankenship (Fed)

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Displaying 1 - 11 of 11

Soft X-Ray Fluorescence Studies of Solids

October 12, 2021
Author(s)
J A. Carlisle, Steven R. Blankenship, R N. Smith, Eric L. Shirley, L J. Terminello, J J. Jia, T A. Callcott, D L. Ederer
Resonant inelastic x-ray scattering (RIXS) has been observed in many systems above and below their core threshold. Below threshold, inelastic-loss features are observed, which disperse linearly with excitation energy, but as the excitation increases above

Edge channels of broken-symmetry quantum Hall states in graphene visualized by atomic force microscopy

May 14, 2021
Author(s)
Joseph A. Stroscio, Sungmin Kim, Johannes Schwenk, Daniel T. Walkup, Yihang Zeng, Fereshte Ghahari, Son T. Le, Marlou R. Slot, Julian Berwanger, Steven R. Blankenship, Kenji Watanabe, Takashi Taniguchi, Franz Giessibl, Nikolai Zhitenev, Cory Dean
The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded and brought into focus the concept of topological order in physics. The topologically protected quantum Hall edge states are of crucial importance to the QH effect but have

Achieving meV tunneling resolution in an in-operando scanning tunneling microscopy, atomic force microscopy, and magnetotransport system for quantum materials research

July 6, 2020
Author(s)
Johannes Schwenk, Sungmin Kim, Julian Berwanger, Fereshte Ghahari Kermani, Daniel T. Walkup, Marlou R. Slot, Son T. Le, W. G. Cullen, Steven R. Blankenship, Sasa Vranjkovic, Hans Hug, Young Kuk, Franz Giessibl, Joseph A. Stroscio
Research in new quantum materials require multi-mode measurements spanning length scales, correlations of atomic scale variables with macroscopic function, and with an ultimate energy resolution only obtainable at ultra-low temperatures, typically in a

A 10 mK Scanning Probe Microscopy Facility

December 29, 2010
Author(s)
Young J. Song, Alexander F. Otte, Steven R. Blankenship, Alan H. Band, Frank M. Hess, Young Kuk, Vladimir Shvarts, Zuyu Zhao, Joseph A. Stroscio
We describe the design, development and performance of a scanning probe microscopy (SPM) facility operating at a base temperature of 10 mK in magnetic fields up to 15 T. The microscope is cooled by a custom designed, fully ultra-high vacuum (UHV)

Real-Space Imaging of Structural Transitions in the Vortex Lattice of V 3 Si

October 6, 2003
Author(s)
C Sosolik, Joseph A. Stroscio, Mark D. Stiles, E Hudson, Steven R. Blankenship, Aaron P. Fein, Robert Celotta
The predictions of nonlocal London theory are confirmed by real-space measurements of the hexagonal to nearly square transition in the vortex lattice structure of V3Si. We observe that the lattice transforms from hexagonal to nearly square over the field

A Facility for Nanoscience Research: An Overview

July 1, 2002
Author(s)
Joseph A. Stroscio, E Hudson, Steven R. Blankenship, Robert Celotta, Aaron P. Fein
We describe the development of an experimental system, consisting of a low temperature scanning tunneling microscope coupled to UHV tip and sample preparation chambers, with the goal of providing new measurement capabilities for the study of quantum and

A Low Temperature STM Facility for the Study of Quantum and Spin Electronic Systems

November 15, 2000
Author(s)
Joseph A. Stroscio, Robert Celotta, Steven R. Blankenship, E Hudson, Aaron P. Fein
We describe an experimental system with the goal of providing new measurement capabilities for the study of quantum and spin electronic systems on the nanometer scale. The physical information desired in such systems includes: the quantized electron energy

A Band-Structure-Based Approach to Modeling X-Ray Absorption, Fluorescence, and Resonant Inelastic Scattering

August 1, 1999
Author(s)
Eric L. Shirley, J A. Carlisle, Steven R. Blankenship, R N. Smith, L J. Terminello, J J. Jia, T A. Callcott, D L. Ederer
X-ray optical processes in solids--absorption, fluorescence and resonantscattering--are modeled within a band-structure-basedapproach to describe electron states. The theory goes beyond a simpleone-electron treatment by considering self-energy corrections