February 28, 2013
Author(s)
Christopher Soles, Richard Kasica, Hae-Jeong Lee, Jae H. Sim, Sung-Il Lee, Ki-Bum Kim, Hyun-Mi Kim, Do Y. Yoon
Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography due to its high resolution, excellent line-edge-roughness (LER), and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ