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Displaying 101 - 125 of 212

Effects of Wafer Emissivity on Light-Pipe Rediometry in RTP Tools

September 1, 2001

Author(s)

Kenneth G. Kreider, David W. Allen, D H. Chen, D P. DeWitt, Christopher W. Meyer, Benjamin K. Tsai

We investigated the effect of different wafer emissivities and the effect of low emissivity films on rapid thermal processing (RTP) wafer temperature measurements using lightpipe radiation thermometers (LPRTs). These tests were performed in the NIST RTP

Bidirectional Reflectance Distribution Function of Rough Silicon Wafers

July 1, 2001

Author(s)

Y J. Shen, Z M. Zhang, Benjamin K. Tsai, D P. DeWitt

The trend towards miniaturization of patterning features in integrated circuits (IC) has made traditional batch furnaces inadequate for many processes. Rapid thermal processing (RTP) for silicon wafers has become more popular in recent years for IC

ITS-90 Calibration of Radiation Thermometers for RTP Using Wire/Thin-Film Thermocouples on a Wafer

June 1, 2001

Author(s)

Christopher W. Meyer, D P. DeWitt, Kenneth G. Kreider, Francis J. Lovas, Benjamin K. Tsai

Light-pipe radiation thermometers (LPRTs) are the sensor system of choice in RTP tools. They can be calibrated against blackbodies with an uncertainty (k=1) less than 0.3 C. In an RTP tool, however, account must be made for wafer emissivity and wafer

Methods Used at NIST to Characterize and Callibrate Lightpipe Radiation Thermometers

June 1, 2001

Author(s)

Benjamin K. Tsai, D P. DeWitt

Lightpipe radiation thermometers (LPRTs) are the sensors of choice for high temperature thermal processing of sillicon wafers. At temperatures above 800 K, sapphire LPRTs are capable of indicating temperature differences and temperatures with an

Transfer Calibration Validation Tests on a Heat Flux Sensor in the 51 mm High-Temperature-Blackbody

May 1, 2001

Author(s)

A V. Murthy, Benjamin K. Tsai, Robert D. Saunders

Facilities and techniques to characterize heat flux sensors are under development at the National Institute of Standards and Technology. As a part of this effort, a large aperture high-temperature blackbody was commissioned recently. The graphite tube

Noncontact Thermometry in the Optical Technology Division at NIST

March 1, 2001

Author(s)

Charles E. Gibson, Howard W. Yoon, Benjamin K. Tsai, Bettye C. Johnson, Robert D. Saunders

The Optical Technology Division (OTD) at the National Institute of Standards and Technology (NIST) maintains the thermodynamic temperature scale above the silver freezing point using spectral radiance ratios according to the International Temperature Scale

Characterization of an Infrared Spectrograph for Non-Contact Thermometry Applications Using a Sodium Heat Pipe Blackbody, ed. by A.E. Rozlosnik and R.B. Dinwiddie

January 1, 2001

Author(s)

Benjamin K. Tsai, J F. Widmann, M Bundy, Shannon B. Hill

Effects of Radiative Properties of Surfaces on Radiometric Temperature Measurement

January 1, 2001

Author(s)

Yong Zhou, Z M. Zhang, D P. DeWitt, Benjamin K. Tsai

Effects of Wafer Emissivity on Lightpipe Radiometry in RTP Tools

January 1, 2001

Author(s)

K G. Kreider, David W. Allen, D H. Chen, D P. DeWitt, C W. Meyer, Benjamin K. Tsai

Non-Contact Thermometry in the Optical Technology Division at NIST, ed. by A.E. Rozlosnik and R.B. Dinwiddie

January 1, 2001

Author(s)

Charles E. Gibson, Howard W. Yoon, Benjamin K. Tsai, Bettye C. Johnson, Robert D. Saunders

Transfer Calibration Validation Tests on a Heat Flux Sensor in the 51 mm High Temperature Blackbody

January 1, 2001

Author(s)

A V. Murthy, Benjamin K. Tsai, Robert D. Saunders

Transfer Calibration Validation Tests on a Heat Flux Sensor in the 51 mm High-Temperature Blackbody

January 1, 2001

Author(s)

A V. Murthy, Benjamin K. Tsai, Robert D. Saunders

Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples

January 1, 2001

Author(s)

Kenneth G. Kreider, D P. DeWitt, Benjamin K. Tsai, B Lojek

Temperature measurement is an important parameter in most semiconductor processes. These measurements are necessary in temperature ranges as low as below 0 C in some plasma etch processes, to near room temperature for soft bakes of resists, to 500 C for